哈爾濱特博科技有限公司

Gallium Phosphide

Material
:Dopant

Type

Diameter [mm]

  EPD [cm^-2]

Carrier Conc. [cm^-3]

Mobility [cm²/Vs]

  Orientation 

Resistivity [Ohmcm]

GaP:S

N

2"，  3"

< 1*10⁵

2*10¹⁷-2*10¹⁸

> 90

(100)， (111)， (110)

GaP:-
undoped

N

2"，  3"

< 1*10⁵

< 10¹⁶

> 90

(100)， (111)， (110)

We offer materials in the form of:

——-  epi-ready wafers:

Diameter: 2" (50.8±0.5mm) or (50.0±0.5mm) 3" (76.2±0.5mm)
Orientation: < 100> ±0.1° or < 111> ±0.1° or < 110> ±0.1°
Thickness: 350±20μm or as specified
Flats: US or EJ (15±2.0 mm / 8±2.0 mm)
Surface finish:     Single side polished or double side polished